14
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2008
?
Initial Release of Data Sheet
1
Oct. 2008
?
Added Fig. 13, MTTF versus Junction Temperature, p. 6
2
Mar. 2009
?
Corrected Zsource, ?0.40 + j5.93? to ?0.39 + j1.26? and Zload, ?1.42 + j5.5? to ?1.27 + j0.96? in Fig. 14, Series
Equivalent Source and Load Impedance data table and replotted data, p. 7
3
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
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